| PART |
Description |
Maker |
| XTSC0805-100NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0603-100NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0402-47NF |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| XTSC0201-10NF-30V |
Extreme Temperature Silicon Capacitor
|
Micross Components
|
| BCR400R Q62702-C2479 |
From old datasheet system
Active Bias Controller (Supplies stable bias current even at low battery voltage and extreme ambient temperature variation)
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| MPXA6115A MPXH6115A |
MPXA6115A High Temperature Accuracy Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated
High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure
|
Motorola
|
| KTY81/121 KTY81/150 |
Silicon temperature sensors
KTY81-1 series; Silicon temperature sensors
|
Philips
|
| KTY81-152 KTY81-151 KTY81-150 KTY81-122 KTY81-121 |
Silicon temperature sensors(纭??绱?俯搴?????)
Silicon temperature sensors(硅元素温度传感器)
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| MPXM2010 MPXM2010D MPXM2010DT1 MPXM2010GS MPXM2010 |
10 KPA ON CHIP TEMPERATURE COMPENSATED CALIBRATED SILICON PRESSURE SENSORS
From old datasheet system
10 kPa On-Chip Temperature Compensated & Calibrated Silicon Pressure Sensors
|
Motorola, Inc
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| KTY82-152 KTY82-151 KTY82-150 KTY82-122 KTY82-121 |
Silicon temperature sensors
|
PHILIPS[Philips Semiconductors]
|
| KTY83/122 KTY83/150 KTY83/151 |
Silicon temperature sensors
|
Philips
|
